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| MITSUBISHI SEMICONDUCTOR MGFS45V2527A 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2527 is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability. 176.+0'&4#9+0) /+0 /+0 7PKVOKNNKOGVGTU KPEJGU r r FEATURES Class A operation Internally matched to 50(ohm) system High output power P1dB = 32W (TYP.) @ f=2.5 - 2.7 GHz High power gain GLP = 12 dB (TYP.) @ f=2.5 - 2.7GHz High power added efficiency P.A.E. = 45 % (TYP.) @ f=2.5 - 2.7GHz Low distortion [item -51] IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L. r r r r r r /+0 /+0 APPLICATION item 01 : 2.5 - 2.7 GHz band power amplifier item 51 : 2.5 - 2.7 GHz band digital radio communication QUALITY GRADE IG r r RECOMMENDED BIAS CONDITIONS VDS = 10 (V) ID = 6.5 (A) RG=25 (ohm) )#6' 5174%' (.#0)' &4#+0 )( (Ta=25deg.C) Ratings -15 -15 22 -61 76 88 175 -65 / +175 Unit V V A mA mA W deg.C deg.C ABSOLUTE MAXIMUM RATINGS Symbol Parameter VGDO Gate to drain voltage VGSO Gate to source voltage ID Drain current IGR Reverse gate current IGF Forward gate current PT *1 Total power dissipation Tch Channel temperature Tstg Storage temperature *1 : Tc=25deg.C < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them.Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. ELECTRICAL CARACTERISTICS Symbol VGS(off) P1dB GLP ID P.A.E. IM3 *2 Rth(ch-c) *3 (Ta=25deg.C) Test conditions VDS = 3V , ID = 60mA Min. 44 VDS=10V, ID(RF off)=6.5A, f=2.5 - 2.7GHz 11 -42 Limits Typ. Max. -5 45 12 7.5 45 -45 1.5 Unit V dBm dB A % dBc deg.C/W Parameter Saturated drain current Output power at 1dB gain compression Linear power gain Drain current Power added efficiency 3rd order IM distortion Thermal resistance delta Vf method *2 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=2.5,2.6,2.7GHz,dfelta f=5MHz *3 : Channel-case MITSUBISHI ELECTRIC r r r r r June-'04 MITSUBISHI SEMICONDUCTOR MGFS45V2527A 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS P1dB,GLP vs. f 46 VDS=10(V) IDS=6.5(A) Po , P.A.E. vs. Pin 16 50 VDS=10 (V) IDS=6.5(A) f=2.6 (GHz) 70 P1dB 45 O T U P W RP u( B ) U P T O E ot d m 15 LN A P W RG I G P( B I E R O E AN L d ) 60 Pout 45 O T U P W RP d ( B ) U P T O E 1 Bd m 40 50 44 14 35 P.A.E. 40 GLP 43 13 30 30 25 20 42 12 20 10 41 2.45 2.5 2.55 2.6 2.65 FREQUENCY f (GHz) 2.7 11 2.75 15 15 20 25 30 35 0 INPUT POWER (dBm) Po,IM3 vs. Pin 42 40 O T U P W RP ( B SCL) U P T O E od m . . . 38 36 34 IM3 32 30 28 26 24 14 16 18 20 22 24 26 28 30 INPUT POWER Pin (dBm S.C.L.) 32 34 -30 -40 -50 -60 -70 VDS=10(V) IDS=6.5(A) f1=2.700(GHz) f2=2.705(GHz) 20 10 Po 0 -10 -20 I 3( B ) M dc S parameters ( Ta=25deg.C , VDS=10(V),IDS=6.5(A) ) S-Parameter (TYP.) S21 S12 Magn. Angle(deg) Magn. Angle(deg) 4.68 75 0.03 40 4.65 70 0.03 34 4.63 64 0.03 26 4.60 58 0.03 19 4.56 52 0.03 14 4.53 46 0.03 5 4.51 40 0.03 -1 4.49 34 0.04 -9 4.47 28 0.03 -15 4.44 22 0.04 -22 4.43 16 0.04 -29 4.42 10 0.04 -37 4.41 4 0.04 -42 4.40 -2 0.04 -50 4.40 -8 0.04 -55 4.39 -14 0.04 -62 4.37 -21 0.04 -70 4.37 -27 0.04 -74 4.35 -34 0.04 -79 4.34 -40 0.04 -88 4.32 -47 0.04 -95 f (GHz) 2.40 2.42 2.44 2.46 2.48 2.50 2.52 2.54 2.56 2.58 2.60 2.62 2.64 2.66 2.68 2.70 2.72 2.74 2.76 2.78 2.80 S11 Magn. Angle(deg) 0.34 -172 0.35 -176 0.37 177 0.40 170 0.41 163 0.43 157 0.43 151 0.44 145 0.45 139 0.45 134 0.45 128 0.45 122 0.44 116 0.44 110 0.43 103 0.42 96 0.40 88 0.39 80 0.37 71 0.36 61 0.34 50 Magn. 0.26 0.26 0.24 0.24 0.22 0.21 0.20 0.20 0.20 0.20 0.19 0.19 0.19 0.19 0.19 0.18 0.18 0.17 0.17 0.16 0.16 S22 Angle(deg) -48 -53 -57 -65 -69 -79 -81 -86 -91 -97 -104 -108 -113 -117 -120 -126 -128 -133 -136 -138 -141 MITSUBISHI ELECTRIC June-'04 P W RA D DE F I N YPAE ( ) O E D E FI E C . . .% C MITSUBISHI SEMICONDUCTOR MGFS45V2527A 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June-'04 |
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